Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Ulloa, J M ^a   Celebi C ^a   Koenraad, P M ^a   Simon, A ^b   Gapihan, E ^b   Letoublon, A ^b   Bertru, N ^b   Drouzas, I ^c   Mowbray, D J ^c   Steer, M J ^c   Hopkinson, M ^c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSA DE RENNES   (France)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; INDIUM ARSENIDE; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; STRAIN;

CHEMICAL EFFECTS; DOT DECOMPOSITION; LATTICE MATCHED LAYERS; STRAINED CAPPING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247853372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722738     Document Type: Article

References (35)

1. S. Fafard, K. Hinzer, S. Raymond, M. Dion, J. McCaffrey, Y. Feng, and S. Charbonneau, Science 0036-8075 10.1126/science.274.5291.1350 274, 1350 (1996).
2. F. Heinrichsdorff, M. -H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 0003-6951 10.1063/1.120556 71, 22 (1997).
3. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 0018-9383 10.1109/16.310117 41, 1628 (1994).
4. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.64.1943 64, 1943 (1990).
5. Q. Xie, P. Chen, and A. Madhukar, Appl. Phys. Lett. 0003-6951 10.1063/1.112790 65, 2051 (1994).
6. X. W. Lin, J. Washburn, Z. Liliental-Weber, E. R. Weber, A. Sasaki, A. Wakahara, and Y. Nabetani, Appl. Phys. Lett. 0003-6951 10.1063/1.112883 65, 1677 (1994).
7. J. M. García, G. Medeiros-Ribeiro, K. Schmidt, T. Ngo, J. L. Feng, A. Lorke, J. Kotthaus, and P. M. Petroff, Appl. Phys. Lett. 0003-6951 10.1063/1.119772 71, 2014 (1997).
8. G. D. Lian, J. Yuan, L. M. Brown, G. H. Kim, and D. A. Ritchie, Appl. Phys. Lett. 0003-6951 10.1063/1.121719 73, 49 (1998).
9. P. D. Siverns, S. Malik, G. McPherson, D. Childs, C. Roberts, R. Murray, and B. A. Joyce, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.R10127 58, R10127 (1998).
10. R. Leon, J. Wellman, X. Z. Liao, J. Zou, and D. J. H. Cockayne, Appl. Phys. Lett. 0003-6951 10.1063/1.126095 76, 1558 (2000).
11. P. B. Joyce, T. J. Krzyzewski, P. H. Steans, G. R. Bell, J. H. Neave, and T. S. Jones, Surf. Sci. 0039-6028 10.1016/S0039-6028(01)01479-0 492, 345 (2001).
12. Q. Gong, P. Offermans, R. Nötzel, P. M. Koenraad, and J. H. Wolter, Appl. Phys. Lett. 0003-6951 10.1063/1.1831564 85, 5697 (2004).
13. G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, R. Songmuang, G. Katsaros, O. G. Schmidt, and K. Kern, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.226106 96, 226106 (2006).
14. V. M. Ustinov and A. E. Zhukov, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/15/8/201 15, R41 (2000).
15. K. Nishi, H. Saito, and S. Sugou, Appl. Phys. Lett. 0003-6951 10.1063/1.123459 74, 1111 (1999).
16. E. C. Le Ru, P. Howe, T. S. Jones, and R. Murray, Phys. Status Solidi C 0, 1221 (2003).
17. H. Y. Liu, M. Hopkinson, C. N. Harrison, M. J. Steer, R. Frith, I. R. Sellers, D. J. Mowbray, and M. S. Skolnick, J. Appl. Phys. 0021-8979 10.1063/1.1542914 93, 2931 (2003).
18. H. Y. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.1897850 86, 143108 (2005).
19. J. M. Ripalda, D. Granados, Y. Gonzalez, A. M. Sanchez, S. I. Molina, and J. M. Garcia, Appl. Phys. Lett. 0003-6951 10.1063/1.2130529 87, 202108 (2005).
20. S. Fŕchengues, N. Bertru, V. Drouot, B. Lambert, S. Robinet, S. Loualiche, D. Lacombe and A. Ponchet, Appl. Phys. Lett. 0003-6951 10.1063/1.123343 74, 3356 (1999).
21. P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, and S. Loualiche, Jpn. J. Appl. Phys., Part 2 44, L1069 (2005).
22. P. Caroff, Appl. Phys. Lett. 0003-6951 10.1063/1.2146063 87, 243107 (2005).
23. D. M. Bruls, Appl. Phys. Lett. 0003-6951 10.1063/1.1504162 81, 1708 (2002).
24. P. Offermans, P. M. Koenraad, R. Nötzel, J. H. Wolter, and K. Pierz, Appl. Phys. Lett. 0003-6951 10.1063/1.2042543 87, 111903 (2005).
25. J. H. Davies, D. M. Bruls, J. W. A. M. Vugs, and P. M. Koenraad, J. Appl. Phys. 0021-8979 10.1063/1.1459100 91, 4171 (2002).
26. W. Seifert, D. Hessman, X. Liu, and L. Samuelson, J. Appl. Phys. 0021-8979 10.1063/1.356385 75, 1501 (1994).
27. K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 0003-6951 10.1063/1.107835 61, 557 (1992).
28. H. Yang, P. Ballet, and G. J. Salamo, J. Appl. Phys. 0021-8979 10.1063/1.1372622 89, 7871 (2001).
29. B. Wang, F. Zhao, Y. Peng, Z. Jin, Y. Li, and S. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.121396 72, 2433 (1998).
30. P. Disseix, C. Payen, J. Leymarie, and A. Vasson, J. Appl. Phys. 0021-8979 10.1063/1.1309050 88, 4612 (2000).
31. P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(03)01421-0 257, 89 (2003).
32. J. He, R. Nötzel, P. Offermans, P. M. Koenraad, Q. Gong, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 0003-6951 10.1063/1.1801172 85, 2771 (2004).
33. M. V. Maximov, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.16671 62, 16671 (2000).
34. R. Songmuang, S. Kiravittaya, and O. G. Schmidt, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(02)02222-4 249, 416 (2003).
35. W. M. McGee, T. J. Krzyzewski, and T. S. Jones, J. Appl. Phys. 0021-8979 10.1063/1.2172228 99, 043505 (2006).