Segregation of indium in InGaAs/GaAs quantum wells grown by vapor-phase epitaxy

Semiconductors

Volumn 37, Issue 2, 2003, Pages 194-199

  Drozdov, Yu N ^a   Baidus N V ^b   Zvonkov, B N ^b   Drozdov, M N ^c   Khrykin, O I ^a   Shashkin, V I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037294247     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1548664     Document Type: Article

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