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Volumn 213, Issue 1, 2000, Pages 193-197

Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033740705     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00349-3     Document Type: Article
Times cited : (36)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.