Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

Applied Physics Letters

Volumn 73, Issue 7, 1998, Pages 969-971

  Harris, L ^a   Mowbray, D J ^a   Skolnick, M S ^a   Hopkinson, M ^a   Hill, G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000923738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122055     Document Type: Article

References (18)

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7. In general, for the present device long (>1 mm) cavities exhibit ground state lasing. The excited state lasing observed for the device studied in this letter most likely results from nonoptimum facet mirrors.
8. TH for this device results from the short cavity length.
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10. This model assumes that the laser behaves as an amplifier of spontaneous emission and hence the gain approaches but never quite equals the cavity loss.
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13. Related lasing spectra with groups of longitudinal modes separated by nonlasing gaps have been reported by S. V. Zaitsev, N. Y. Gordeev, V. M. Ustinov, A. E. Zhukov, A. Y. Egorov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, Z. I. Alferov, and D. Bimberg, Semiconductors 31, 455 (1997).
14. The influence of an inhomogeneously broadened gain spectrum on the spectral emission of a quantum dot laser has been briefly discussed in D. Bimberg, N. Kirkstaedter, N. N. Ledentsov, Z. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, IEEE J. Sel. Top. Quantum Electron. 3, 196 (1997).
15. L. Harris, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, and G. Hill (unpublished).
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18. This large number for relatively narrow cavities results from the large refractive index contrast between the semiconductor active region and the SiN which covers the ridge.