Origin of antimony segregation in GaInSb/InAs strained-layer superlattices

Physical Review Letters

Volumn 85, Issue 21, 2000, Pages 4562-4565

  Steinshnider, J ^a   Harper, J ^a   Weimer, M ^a   Lin, C H ^b   Pei, S S ^b   Chow, D H ^c  

^a TEXAS A AND M UNIVERSITY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEGREGATION (METALLOGRAPHY);

ANION LAYER EXCHANGE; SPATIAL EVOLUTION;

SUPERLATTICES;

EID: 0034321218     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4562     Document Type: Article

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