Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 58-61

  Semenov, Alexey ^a   Lyublinskaya, Olga G ^a   Solov'ev, Victor A ^a   Meltser, Boris Ya ^a   Ivanov, Sergey V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Segregation; A3. Molecular beam epitaxy; B1. Antimonides

Indexed keywords

ANTIMONY COMPOUNDS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SURFACE SEGREGATION;

ANTIMONIDES; SPECULAR SPOT INTENSITY (SSI); STRANSKI KRASTANOW GROWTH; SURFACE EXPOSURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947322836     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.002     Document Type: Article

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