Compatibilities of dielectric films

Interlayer Dielectrics for Semiconductor Technologies

Volumn , Issue , 2003, Pages 77-119

  Goldberg, C K ^a   Wang, V S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350134396     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1016/B978-012511221-5/50006-4     Document Type: Article

References (107)

1. Buchwalter L.P. Relative adhesion measurement for thin film microelectronic structures. Part II. Adhesion Measurement of Films & Coatings 2001, Vol. 2:19-47. VSP, The Netherlands. K.L. Mittal (Ed.).
2. Barth E.P., Ivers T.H., McLaughlin P.S., McDonald A., Levine E.N., Greco S.E., Fitzsimmons J., Melville I., Spooner T., DeWan C., Chen X., Manger D., Nye H., McGahay V., Biery G.A., Goldblatt R.D., Chen T.C. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 219-221.
3. Snodgrass J.M., Dauskardt R.H. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D1.3.1-D1.3.6.
4. Gambino J., Lavoie M., Wistrom R., Bomberger G., Cooney E., Kontra R., Johnson C., Dokumaci O., Dehaven P. Advanced Metallization Conference 2000 2001, 343-347.
5. Edelstein D., Uzoh C., Cabral C., DeHaven P., Buchwalter P., Simon A., Cooney E., Malhotra S., Klaus D., Rathore H., Agarwala B., Nguyen D. Proceedings of the IEEE 2001 International Interconnect Technology Conferance 2001, 9-11.
6. Donaton R.A., Stryf H., Lepage M., Coenegrachts B., Stucchi M., De Roest D., Baklanov M.R., Vanhaaelemeersch S., Maex K., Gaillard F., Xia L.-Q., Lim T.-H., Gotuaco M., Yieh E., Van Autryve L. Advanced Metallization Conference 2000 2001, 595-601.
7. Schulz S.E., Koerner H., Helneder H., Schwerd M., Wendt H., Murray C., Steriter I., Gessner T. Advanced Metallization Conference 2000 2001, 321-328.
8. Waeterloos J., Shaffer E., Stokich T.M., Donaton R.A., Maex K. Advanced Metallization Conference 2000 2001, 469-475.
9. Ryan E.T., Lin S., Nelson D., Wetzel J., Gidley D., Drage J. Advanced Metallization Conference 2000 2001, 557-564.
10. Song J.G., Ryu C.K., Kim H.-D., Kim S.-B. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 55-57.
11. Wu Z.-C., Shiung Z.-W., Wu R.-G., Liu Y.-L., Wu W.-H., Tsui B.-Y., Chen M.-C., Cheang W., Chou P.-F., Jang S.-M., Yu C.-H., Liang M.-S. J. Electrochem Soc. 2001, 148:F109-F114.
12. Waeterloos J.J., Shaffer E.O., Stokich T., Hetznew J., Price D., Booms L., Donaton R.A., Beyer G., Coenegrachts B., Caluwaerts R., Struyf H., Tokei Z.S., Vervort I., Sijmus B., Vos I., Maex K., Momiya T., Iwashita M. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 60-62.
13. Passemard G., Demolliens O. Advanced Metallization Conference 2000 2001, 77-83.
14. Bencher C., Filipiak S. Advanced Metallization Conference 2000 2001, 625-628.
15. Wistrom R., Bomberger G., Cohen S., Hazel S., Lavoie M., Gambino J., Poley D., Dokumaci O. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 168-170.
16. Martin J.S., Taylor K.J., Luttmer J.D., Ralston A.K.R., West J.A., Bonifield T.D., Mickler E.M., Bolnedi S., Adams C.T., Chew K.-H., Bayman A., Van Schravendijk B. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 39-41.
17. Furusawa T., Sakuma N., Ryuzaki D., Kondo S., Takeda K., Machida S., Hinode K. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 222-224.
18. Peters L. Senicond. Int. 2001, May:66-76.
19. Wrschka P., Lee G., Low K.-S., Dev K., Dobuzinsky D., Conti R., Shafer P. Advanced Metallization Conference 2000 2001, 549-555.
20. Baklanov M.R., Shamiryan D.G., Tokei Zs., Beyer G.P., Conard T., Vanhaelemeersch S., Maex K. J. Vac. Sci. Technol. B 2001, 19:1201-1211.
21. Goldblatt R.D., Agarwala B., Anand M.B., Barth E.P., Biery G.A., Chen Z.G., Cohen S., Connolly J.B., Cowley A., Dalton T., Das S.K., Davis C.R., Deutsch A., DeWan C., Edelstein D.C., Emmi P.A., Faltermeier C.G., Fitzsimmons J.A., Hedrick J., Heidenreich J.E., Hu C.K., Hummel J.P., Jones P., Kaltalioglu E., Kastenmeier B.E., Krishnan M., Landers W.F., Liniger E., Liu J., Lustig N.E., Malhotra S., Manger D.K., McGahay V., Mih R., Nye H.A., Purushothamam S., Rathore H.A., Seo S.C., Shaw T.M., Simon A.H., Spooner T.A., Stetter M., Wachnik R.A., Ryan J.G. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 261-263.
22. Donaton R.A., Iacopi F., Baklanov M.R., Shamiryan D., Coenegrachts B., Stryf H., Lepage M., Meuris M., Van Hove M., Gray W.D., Meynen H., DeRoest D., Vanhaelemeersch S., Maex K. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 93-95.
23. Case C.B., Buonanno M., Forsythe G., Maynard H., Miner J., Tai W.W., Yang J.J. Advanced Metallization Conference 1999 2001, 349-355.
24. Iacopi F., Donaton R.A., Coenegrachts B., Komiya T., Struyf H., Lepage M., Van Aelst J., Boullart W., De Roest D., Vos I., Baklanov M.R., Vereecke G, Van Hove M., Stucchi M., Tokei Zs., Meynen H., Bremmer J.N., Vanhaelemeersch S., Maex K. Advanced Metallization Conference 2000 2001, 287-293.
25. Waeterloos J.J., Struyf H., Van Aelst J., Das A., Caluwaerts R., Alaerts C., Boullart W., Tokei Zs., Van Hove M., Maex K. Presented at Advanced Matallization Conference 2001 2001.
26. Lin S., Jin C., Lui L., Tsai M., Daniels M., Gonzalez A., Wetzel J., Monnig K.A., Winebarger P.A., Jang S., Yu D., Liang M.S. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2001, 146-148.
27. Lanckmans F., Brongersma S.H., Varga I., Bender H., Beyne E., Maex K. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D1.4.1-D1.4.6.
28. Jin C., Wetzel J. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 99-101.
29. Wolany D., Fladung T., Duda L., Lee J.W., Gantenfort T., Wiedmann L., Benninghoven A. Surf. Interface Anal. 1999, 27:609-617.
30. Shannon V. Solid State Technol. 2001, September:S22-S26.
31. Mosig K., Jacobs T., Kofron P., Daniels M., Brennan K., Gronzalez A., Auger R., Wetzel J., Havemann R., Shiota A. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2001, 292-294.
32. Braeckelmann G., Venkatraman R., Herrick M., Cole R., Clegg D. Presented at 2000 Spring MRS Conference 2000.
33. Hu C.-K., Rosenberg R., Klassen W., Stamper A.K. Advanced Metallization Conference 1999 2000, 691-697.
34. Apen E., Rogers B.R., Sellers J.A. J. Vac. Sci. Technol. A 1998, 16:1227-1232.
35. Hymes S., Kumar K.S., Murarka S.P. J. Vac. Sci. Technol. B 1998, 16:1107-1109.
36. Beyer G.P., Baklanov M., Conrad T., Maex K. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D9.17.1-D9.17.6.
37. Hymes S., Kumar K.S., Murarka S.P., Ding P.J., Wang W., Lanford W.A. J. Appl. Phys. 1998, 83:4507-4512.
38. Braeckelmann G., Venkatraman R., Capasso C., Herrick M. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 236-238.
39. Li J., Mayer J.W., Colgan E.G. J. Appl. Phys. 1991, 70:2820-2827.
40. Herley P.J., Greer A.L., Jones W. Appl. Phys. Lett. 2001, 79:2725-2727.
41. Martin J., Filipiak S., Stephens T., Huang F., Aminpur M., Mueller J., Demircan E., Zhao L., Werking J., Goldberg C., Park S., Sparks T., Esber C. The Proceedings of the IEEE 2002 International Interconnect Technology Conference 2002, To be published in.
42. Pan J.S., Wee A.T.S., Huan C.H.A., Chai J.W., Zhang J.H. Mater. Res. Soc. Proc. 2001, 612:D9.18.1-D9.18.6.
43. Wang P.-I., Murarka S.P., Yang G.-R., Barnat E., Lu T.-M., Chen Y.-C., Li X., Rajan K. Mater. Res. Soc. Proc. 2001, 612:G7.5.1-G7.5.6.
44. Tsui T., Goldberg C., Braeckelmann G., Filipiak S., Ekstrom B., Lee J.J., Jackson E., Herrick M., Iacoponi J., Martin J., Sieloff D. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D1.2.1-D1.2.5.
45. Zhang J., Denning D., Garcia S., Pozder S., Scott K. Semiconductor device adhesive layer structure and process for forming structure 2001, Patent US6294458 B1, granted 200010925.
46. Iacopi F., Tokei Zs., Shamiryan D., Le Quoc T., Malhouitre S., Van Hove M., Maex K. Presented at Advanced Metallization Conference 2001 2001.
47. Chang C.-A., Kim Y.-K., Schrott A.G. J. Vac. Sic. Technol. A 1990, 9:1518-1525.
48. Scherban T., Sun B., Blaine J., Block C., Jin B., Andideh E. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2001, 257-259.
49. Kim K.S., Jang Y.C., Kim H.J., Quan Y.-C., Choi J., Jung D., Lee N.-E. Thin Solid Films 2001, 377-378:122-128.
50. Pyi S.H., Yeo I.S., Weon D.H., Kim Y.B., Kim H.S., Lee S.K. IEEE Electron. Dev. Lett. 1999, 20:384-386.
51. Inaba S., Takahashi M., Okayama Y., Yagishita A., Matsuoka F., Ishiuchi H. 1997 Symposium on VLSI Technology Digest of Technology Papers 1997, 119-120.
52. Kim K., Hwang C.G., Lee J.G. IEEE Trans. Electron. Dev. 1998, 45:598.
53. Sung K.T., Pang S.W., Cole M.W., Pearce N. J. Electrochen. Soc. 1995, 142:206.
54. Perera A.H., Lin J.H., Ku Y.C., Azrak M., Taylor B., Hayden J., Thompson M., Blackwell M. IEDM Technical Digest 1995, 679.
55. Yamabe K., Imai K. IEEE Trans. Electron. Dev. 1987, ED-34:1681.
56. Chatterjee A., Ali I., Joyner K., Mercer D., Kuehne J., Mason M., Esquivel A., Rogers D., O'Brien S., Mei P., Murtaza S., Kwok S.P., Taylor K., Nag S., Hames G., Hanratty M., Marchman H., Ashburn S., Chen I.C. J. Vac. Sci. Technol. B 1997, 15:1936-1942.
57. Lee H.S., Park M.H., Yu G.S., Park T., Kang H.K., Lee S.I., Lee M.Y. 1996 Symposium on VLSI Technology Digest of Technical Papers 1996, 158-159.
58. Somasekhar A., O'Brien S. J. Electrochen. Soc. 1996, 143:2885.
59. Murarka S.P., Peckerar M.C. Electronic Materials Science and Technology 1989, Academic Press, San Diego.
60. Chang C.-A., Sze S.M. ULSI Technology 1996, McGraw Hill, New York.
61. Kern W., Poutinen D.A. RCA Rev. 1970, 31:187-206.
62. Heyns M.M., Verhaverbeke S., Meuris M., Mertens P.W., Schmidt H., Kubota M., Philipossian A., Dillenbeck K., Graf D., Schnegg A., de Blank R. Surface Chemical Cleaning and Passivation for Saniconductor Processing Symposium, 1993 Materials Research Society Proceedings 1993, 35-45.
63. Guo X., Wang X., Luo Z., Ma T.P., Tamagawa T. International Electron Devices Meeting 1999 Technical Digest 1999, 137-140.
64. Hobbs C., Hegde R., Maiti B., Tseng H., Gilmer D., Tobin P., Adetutu O., Huang F., Weddington D., Nagabushnam R., O'Meara D., Reid K., La L., Grove L., Rossow M. 1999 Symposium on VLSI Technology Digest of Technical Papers 1999, 133-134.
65. Park D., Lu Q., King T.J., Hu C., Kalnitsky A., Tay S.P., Cheng C.C. International Electron Devices Meeting 1998 Technical Digest 1998, 381-384.
66. Campbell S.A., Gilmer D.C., Wang X.C., Hsieh M.T., Kim H.S., Gladfelter W.L., Yan J. IEEE Trans. Electron Dev. 1997, 44:104-109.
67. Qi W.J., Nieh R., Lee B.H., Kang L., Jeon Y., Onishi K., Ngai T., Banerjee S., Lee J.C. International Electron Devices Meeting 1999 Technical Digest 1999, 145-148.
68. Lee C.H., Luan H.F., Bai W.P., Lee S.J., Jeon T.S., Senzaki Y., Roberts D., Kwong D.L. International Electron Devices Meeting 2000 Technical Digest 2000, 27-30.
69. Wilk G.D., Wallace R.M. Appl. Phys. Lett. 2000, 76:112-114.
70. Wilk G.D., Anthony J.M. J. Appl. Phys. 2001, 89:5243-5275.
71. Wang S., Grover G., Baker C., Chamberlain J., Yu C. Solid State Technol. 2001, September:S9-S10.
72. Shekhawat G.S., Kolosov O.V., Briggs G.A.D., Shaffer E.O., Martin S.J., Geer R.E. Proceedings of the IEEE 2000 International Interconect Technology Conference 2000, 96-98.
73. Shekhawat G.S., Kolosov O.V., Briggs G.A.D., Shaffer E.O., Martin S., Geer R.E. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D1.7.1-D1.7.7.
74. Gross T.S., Soucy K.G. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 241-243.
75. Mittal, K.L. (1995). Adhesion measurement of films and coatings: a commentary. In Adhesion Measurenents of Films and Coatings (Ed. K.L. Mittal). Utrecht, The Netherlands, pp. 1-13.
76. Riegert, R.P. (1996). Proposed methods for identification and normalization of strain dynamic effects in adherence testing of metallized plastics, information material of adhesion tester "Romulus II".
77. Hintermann H.E. Fresenius' J. Anal. Chem. 1993, 346:45.
78. Perry A.J. Thin Solid Films 1983, 107:167-180.
79. Adhihetty I., Vella J.B., Volinsky A.A., Goldberg C., Gerberich W.W. Proceedings of 10th International Congress on Fracture 2001.
80. Jain A., Rogojevic S., Wang F., Gill W., Wayner P.C., Plawsky J.L., Haberl A., Lanford W. Technology and reliability for advanced interconnects and low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D5.25.1-D5.25.6.
81. Lin S., Wetzel J., Monnig K.A., Winebarger P.A., Jang S., Yu D., Liang M.S. Presented at Advanced Metallization Conference 2001 2001.
82. Nomura Y., Ota F., Park I.-T., Kurino H., Koyangi M. Advanced Metallization Conference 2000 2001, 659-664.
83. Mercado L., Goldberg C., Kuo S.-M. The Proceedings of the IEEE 2002 International Interconnect Technology Conference 2002, To be published in.
84. Cui H., Lu H., Bhat I., Murarka S., Lanford W., Li W. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 45-47.
85. Furasawa T., Ryuzaki D., Yoneyama R., Homma Y., Hinode K. J. Electrochem. Soc. 2001, 148:F175-F179.
86. Goldberg C.K., Mercado L., Filipiak S., Crown S. Proceedings of the IEEE 2002 International Interconnect Technology Conference 2002, To be published in the.
87. Lee J., Mack A.S. IEEE Trans. Semicond. Manuf. 1998, 11:458-464.
88. Lane M., Dauskardt R.H. J. Mater. Res. 2000, 15:2758-2769.
89. Shen Y.-L., Suresh S., Blech I.A. J. Appl. Phys. 1996, 80:1388-1398.
90. Cook F., Suo Z. MRS Bull. 2002, 27(1):45-50.
91. Smee S.A., Gaitan M., Novotny D.B., Joshi Y., Blackburn D.L. IEEE Electron. Dev. Lett. 2000, 21:12-14.
92. Hutchinson J.W., Evans A.G. Acta Mater. 2000, 48:125-135.
93. Tsai M.H., Tasi W.J., Shue S.L., Yu C.H., Liang M.S. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 214-216.
94. Glickman E., Nathan M. J. Appl. Phys. 1996, 80:3782-3791.
95. Doan J.C., Lee S., Lee S.-H., Flinn P.A., Bravman J.C., Marieb T.N. J. Appl. Phys. 2001, 89:7797-7808.
96. Tsai M.H., Auger R., Blaschke V., Havemann R.H., Ogawa E.T., Ho P.S., Yeh W.K., Shue S.L., Yu C.H., Liang M.S. Proceedings of the IEEE 2001 International Interconnect Technology Conference 2001, 266-268.
97. Cheng Y.Y., Chao L.C., Jang S.M., Yu C.H., Liang M.S. Proceedings of the IEEE 2000 International Interconnect Technology Conference 2000, 161-163.
98. Evans D.F. MRS Symp. Proc. Interfacial Engineering for Optimized Properties 1997, 459:3-6.
99. Golden J.H., Hawker C.J., Ho P.S. Semicond. Int. 2001, May:79-86.
100. Hau-Riege S.P., Thompson C.V. J. Mater. Res. 2000, 15:1797-1802.
101. Hau-Riege S.P., Thompson C.V. Technology and reliability for advanced interconnectsand low-k dielectrics. Mater. Res. Soc. Proc. 2001, 612:D10.2.1-D10.2.4.
102. Lee H.M., Lin J.C., Liu C.S., Shue S.L., Yu C.H., Liang M.S. Presented at Advanced Metaflization Conference 2001 2001.
103. Ma Q. J. Mater. Res. 1997, 12:840-845.
104. Shamiryan D., Baklanov M.R., Tokei Z., Iacopi F., Maex K. Presented at Advanced Metallization Conference 2001 2001.
105. Shen Y.-L. J. Mater. Res. 1997, 12:2219-2222.
106. Uhlig M., Bertz A., Rennau M., Schulz S.E., Werner T., Gessner T. Microdetron. Eng. 2000, 50:7-14.
107. Volinsky A.A., Moody N.R., Gerberich W.W. Thin films-stresses and mechanical properties VIII. Symposium (Materials Research Society Symposiums Proceedings 2000, Vol. 594:383-388. R. Vince, O. Kraft, N. Moody, P. Besser, E. Shaffer (Eds.).