Integration of copper and fluorosilicate glass for 0.18 μm interconnections

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 219-221

  Barth, E P ^a   Ivers, T H ^a   McLaughlin, P S ^a   McDonald, A ^a   Levine, E N ^a   Greco, S E ^a   Fitzsimmons, J ^a   Melville, I ^a   Spooner, T ^a   DeWan, C ^a   Chen, X ^a   Manger, D ^a   Nye, H ^a   McGahay, V ^a   Biery, G A ^a   Goldblatt, R D ^a   Chen, T C ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER; GLASS;

ADVANCED CMOS; BEOL STRUCTURES; DUAL DAMASCENE; FLUOROSILICATE GLASS; HIGH-PERFORMANCE LOGIC; TECHNOLOGY NODES;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84962905829     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854330     Document Type: Conference Paper

References (3)

1. Pires, et. al., "Relation Between Density and Chemical Stability of PECVD FSG Film," in Proceedings of the 1997 Dielectrics for ULSI Multilevel Interconnections Conference.
2. C. Hu, K. P. Rodbell, T. D. Sullivan, K. Y. Lee, and D. P. Bouldin, IBM J. of Research and Development, Vol. 39, No. 4, July 1995, pp. 465-497.
3. E. Leobandung, et. al., "High Performance 0.18μm SOI CMOS Technology," in Proceedings of the 1999 International Electron Devices Meeting.