Ultra-low dielectric constant low density material (k=2.2) for Cu damascene

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 161-163

  Cheng, Y Y ^a   Chao, L C ^a   Jang, S M ^a   Yu, C H ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT INTERCONNECTS; PHOTORESISTS; SHOTCRETING; SILICON NITRIDE; SPIN GLASS; STRIPPING (REMOVAL);

CAPACITANCE REDUCTION; INTER-METAL DIELECTRICS; LOW-DENSITY MATERIALS; MOISTURE ADSORPTION; PHOTORESIST STRIPPING; RESIST STRIPPING; SINGLE DAMASCENE; ULTRA-LOW DIELECTRIC CONSTANT;

DIELECTRIC MATERIALS;

EID: 84962861087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854312     Document Type: Conference Paper

References (2)

1. rd Int. DUMIC 1997, p. 13.
2. R. Muraguchi et al. submitted to MRS 1999.