SiON/Ta2O5/TiN gate-stack transistor with 1.8 nm equivalent SiO2 thickness

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 381-384

  Park, Donggun ^a   Lu, Qiang ^a   King, Tsu Jae ^a   Hu, Chenming ^a   Kalnitsky, Alexander ^a   Tay, Sing Pin ^a   Cheng, Chia Cheng, ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON NITRIDE; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

GATE DIELECTRICS; SILICON OXYNITRIDE; TANTALUM PENTOXIDE;

MOSFET DEVICES;

EID: 0032255794     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)