Optimized densification of the filled oxide for quarter micron shallow trench isolation (STI)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 158-159

  Lee, Han Sin ^a   Park, Moon Han ^a   Shin, Yu Gyun ^a   Park, Tai su ^a   Kang, Ho Kyu ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; ELECTRIC RESISTANCE; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN; OPTIMIZATION; OXIDATION; PHOTOLITHOGRAPHY; WATER;

LEAKY ISOLATION CHARACTERISTICS; SECCO ETCHING; SHALLOW TRENCH ISOLATION; TRENCH SIDEWALL OXIDE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029703518     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)