Etching SiO2 films in aqueous 0.49% HF

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 2885-2891

  Somashekhar, Ambika ^a,c   O'Brien, Sean ^a,b  

^a TEXAS INSTRUMENTS   (United States)

^b ELECTROCHEMICAL SOCIETY

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; CALCULATIONS; COMPOSITION EFFECTS; HYDROFLUORIC ACID; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICA; SOLUTIONS; THERMAL EFFECTS; WASHING;

BOROPHOSPHOSILICATE GLASS; BUFFERING; ETCH RATE; FILM THICKNESS; RINSE RATE; TETRAETHYL ORTHOSILICATE; THERMAL OXIDE; ZERO TIME INTERCEPT;

ETCHING;

EID: 0030245930     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837122     Document Type: Article

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