메뉴 건너뛰기




Volumn 80, Issue 3, 1996, Pages 1388-1398

Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3743109337     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362938     Document Type: Article
Times cited : (143)

References (28)
  • 3
    • 0029239147 scopus 로고
    • Materials Research Society Symposium Proceedings, edited by S. P. Baker, C. A. Ross, P. H. Townsend, C. A. Volkert, and P. Borgesen Materials Research Society, Pittsburgh
    • U. Burges, H. Helneder, M. Schneegans, D. Beckers, M. Hallerbach, H. Schroeder, and W. Schilling, Thin Films: Stresses and Mechanical Properties V, Materials Research Society Symposium Proceedings, edited by S. P. Baker, C. A. Ross, P. H. Townsend, C. A. Volkert, and P. Borgesen (Materials Research Society, Pittsburgh, 1995), Vol. 356, p. 423.
    • (1995) Thin Films: Stresses and Mechanical Properties V , vol.356 , pp. 423
    • Burges, U.1    Helneder, H.2    Schneegans, M.3    Beckers, D.4    Hallerbach, M.5    Schroeder, H.6    Schilling, W.7
  • 12
    • 0028715273 scopus 로고
    • Materials Reliability in Microelectronics IV
    • edited by P. Borgesen, J. C. Coburn, J. E. Sanchez, Jr., K. P. Rodbell, and W. F. Filter Materials Research Society, Pittsburgh
    • Chidambarrao, K. P. Rodbell, M. D. Thouless, and P. W. DeHaven, Materials Reliability in Microelectronics IV, Materials Research Society Symposium Proceedings, edited by P. Borgesen, J. C. Coburn, J. E. Sanchez, Jr., K. P. Rodbell, and W. F. Filter (Materials Research Society, Pittsburgh, 1994), Vol. 338, p. 261.
    • (1994) Materials Research Society Symposium Proceedings , vol.338 , pp. 261
    • Chidambarrao1    Rodbell, K.P.2    Thouless, M.D.3    DeHaven, P.W.4
  • 13
    • 85033821666 scopus 로고    scopus 로고
    • A. S. Mack and P. Flinn, in Ref. 3, p. 465
    • A. S. Mack and P. Flinn, in Ref. 3, p. 465.
  • 17
    • 85033809773 scopus 로고    scopus 로고
    • note
    • y,film, and if only linear elastic materials are involved, as in the present study.
  • 21
    • 36849104521 scopus 로고
    • The Si single crystal has anisotropic elastic properties. The in-plane isotropy on the (111) plane, however, is maintained [W. A. Brantley, J. Appl. Phys. 44, 534 (1973)]. In the calculations the Young's modulus and Poisson ratio of the (111) oriented wafer were taken to be those along the (111) plane. The accuracy of this choice was evaluated by performing more involved calculations using the anisotropic elastic properties for a particular line geometry (Specimen 6), and it was found that the errors induced are negligible. The curvature values obtained in directions perpendicular and parallel to the lines are the same, and only very slight discrepancies in the stress field exist. The small differences are such that the contour plots of various stress components presented in this article are essentially unaffected.
    • (1973) J. Appl. Phys. , vol.44 , pp. 534
    • Brantley, W.A.1
  • 24
    • 85033829044 scopus 로고    scopus 로고
    • note
    • In these calculations, the etching process is equivalent to thermal straining of the film-substrate system from the initially stress-free state to room temperature, and then removing a part of the film material to form lines. It is also equivalent to the situation wherein etching is done at the initial state when no internal stresses are present, and then imposing thermal strains on the line-substrate structure so that the final state corresponds to room temperature. These two different procedures lead to identical results which establish the equivalence of the etching and thermal loading processes, when the material exhibits a linear elastic behavior.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.