Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO2 gate dielectric formed by titanium oxidation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 133-134

  Hobbs, C ^a   Hegde, R ^a   Maiti, B ^a   Tseng, H ^a   Gilmer, D ^a   Tobin, P ^a   Adetutu, O ^a   Huang, F ^a   Weddington, D ^a   Nagabushnam, R ^a   O'Meara, D ^a   Reid, K ^a   La, L ^a   Grove, L ^a   Rossow, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; MOSFET DEVICES; OXIDATION; TITANIUM NITRIDE; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE MEASUREMENTS; GATE DIELECTRIC; METAL OXIDATION; PHYSICAL VAPOR DEPOSITION; SUB QUARTER MICRON CMOS PROCESS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033281225     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)