Plasma-surface interactions of advanced photoresists with C4 F8 Ar discharges: Plasma parameter dependencies

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 92-106

  Engelmann, S ^a   Bruce, R L ^a   Sumiya, M ^a   Kwon, T ^a   Phaneuf, R ^a   Oehrlein, G S ^a   Andes, C ^b   Graves, D ^c   Nest, D ^c   Hudson, E A ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b ROHM AND HAAS COMPANY   (United States)

^c University of California   (United States)

^d LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POWER; CONTACT HOLES; ETCH BEHAVIORS; EXCESS ENERGIES; FLUENCE; FLUOROCARBON GAS; INTENSITY RATIOS; ION ENERGIES; MOLECULAR COMPOUNDS; NANOSCALE PROCESSING; NEAR SURFACES; PATTERN TRANSFERS; PLASMA ETCH; PLASMA PARAMETERS; PLASMA-SURFACE INTERACTIONS; POLYMER SURFACES; POWER LEVELS; PROCESS PARAMETERS; REMOVAL RATES; ROUGH SURFACES; S RATIOS; SELF-BIAS VOLTAGES; SIDE WALL ROUGHNESS; STRUCTURE OF THE POLYMERS; SURFACE ENERGY DENSITIES; SURFACE FLUORINATIONS; SURFACE-ROUGHENING; TOP SURFACES; VOLUME ELEMENTS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMPLIFICATION; ARGON; CHEMICAL REACTIONS; ELECTRIC DISCHARGES; ETCHING; FLUORINATION; FLUORINE; FLUOROCARBONS; HALOGENATION; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHOTORESISTORS; PHOTORESISTS; PLASMA ETCHING; PLASMA INTERACTIONS; PLASMAS; POLYMERS; SURFACE CHEMISTRY; SURFACE DISCHARGES; SURFACE ROUGHNESS; SURFACE TENSION; SURFACE TREATMENT; SURFACES; THREE DIMENSIONAL; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE MORPHOLOGY;

EID: 59949084928     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3054342     Document Type: Article

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