Sub-0.1 μm nitride hard mask open process without procuring the ArF photoresist

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 790-794

  Kim, J ^a   Chae, Y S ^a   Lee, W S ^a   Shon, J W ^a,b   Kang, C J ^a   Han, W S ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DRY ETCHING; FLUORINE CONTAINING POLYMERS; MASKS; NITRIDES; PLASMA DIAGNOSTICS;

STRIATION;

PHOTORESISTS;

EID: 0037276788     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. L. Rayleigh, Philos. Mag. 8, 403 (1879).
2. P. Martens et al., Proc. SPIE 4345, 138 (2001).
3. C. Janowiak, S. Ellingboe, and I. Morey, J. Vac. Sci. Technol. B 18, 1859 (2000).