Properties of C 4F 8 inductively coupled plasmas. I. Studies of Ar/c-C 4F 8 magnetically confined plasmas for etching of SiO 2

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 500-510

  Li, Xi ^a   Ling, Li ^a   Hua, Xuefeng ^a   Oehrlein, Gottlieb S ^a   Wang, Yicheng ^b   Vasenkov, Alex V ^c   Kushner, Mark J ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS MIXTURES; ION FLUX; MAGNETIC CONFINEMENT; PLASMA PARAMETERS;

CHEMICAL REACTORS; COMPOSITION; CURRENT DENSITY; FLUOROCARBONS; MAGNETIC FIELDS; MIXTURES; PLASMA CONFINEMENT; PLASMA ETCHING; PRESSURE EFFECTS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

INDUCTIVELY COUPLED PLASMA;

EID: 3142558000     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1697482     Document Type: Article

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