Line edge roughness in 193nm resists: Lithographic aspects and etch transfer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  Wallow, Thomas ^a   Acheta, Alden ^a   Ma, Yuansheng ^a   Pawloski, Adam ^c   Bell, Scott ^b   Ward, Brandon ^b   Tabery, Cyrus ^a   La Fontaine, Bruno ^a   Kim, Ryoung Han ^a   McGowan, Sarah ^a   Levinson, Harry J ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b Submicron Development Center   (United States)

^c Affymetrix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH TRANSFER; FOCUS-EXPOSURE MATRIX; IMAGE-LOG-SLOPE (ILS); LINE EDGE ROUGHNESS;

EDGE DETECTION; ETCHING; IMAGING TECHNIQUES; LITHOGRAPHY; POWER SPECTRAL DENSITY; SURFACE ROUGHNESS;

PHOTORESISTS;

EID: 35148889412     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712319     Document Type: Conference Paper

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