Fluorocarbon-based plasma etching of Sio2: Comparison of C4F6/Ar and C4F8/Ar discharges

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 6, 2002, Pages 2052-2061

  Li, Xi ^a   Hua, Xuefeng ^a   Ling, Li ^a   Oehrlein, Gottlieb S ^a   Barela, Marcos ^b   Anderson, Harold M ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; EMISSION SPECTROSCOPY; FLUOROCARBONS; PARTIAL PRESSURE; PLASMA ETCHING; SURFACE CHEMISTRY;

ION CURRENTS;

SILICA;

EID: 0036863139     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1517256     Document Type: Article

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