Reactive ion etching of fluorine containing photoresist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Patel, Kaushal S ^a   Pham, Victor ^a   Li, Wenjie ^a   Khojasteh, Mahmoud ^a   Varanasi, Pushkara Rao ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

ArF; Etch rate model; Fluorinated photoresist; Ohnishi parameter; Reactive ion etching; Ring parameter

Indexed keywords

ARF; ETCH RATE MODEL; FLUORINATED PHOTORESIST; OHNISHI PARAMETER; RING PARAMETER;

COMPOSITION; CORRELATION METHODS; MULTILAYERS; PARAMETER ESTIMATION; REACTIVE ION ETCHING; SEMICONDUCTOR MATERIALS;

PHOTORESISTS;

EID: 33745586326     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656605     Document Type: Conference Paper

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