Effect of different frequency combination on ArF photoresist deformation and silicon dioxide etching in the dual frequency superimposed capacitively coupled plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1386-1394

  Lee, C H ^a,b   Kim, D H ^c   Lee, N E ^a,b   Kwon, G C ^c  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Jusung Engineering Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ION BOMBARDMENT; MORPHOLOGY; PHOTORESISTORS; PLASMA ETCHING; SURFACE ROUGHNESS;

GAS FLOW CONDITIONS; ION FLUX; ION-BOMBARDMENT ENERGY; RADICAL FLUX DENSITY;

SILICA;

EID: 33745504045     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2201059     Document Type: Article

References (42)

1. D. H. Kim, C. H. Lee, S. H. Cho, and N.-E. Lee, J. Vac. Sci. Technol. B 23, 2203 (2005).
2. J. Kim, Proceedings of the Dry Process International Symposium (unpublished).
3. J. Kim, Y. S. Chae, W. S. Lee, J. W. Shon, C. J. Kang, W. S. Han, and J. T. Moon, J. Vac. Sci. Technol. B 21, 790 (2003).
4. Y. S. Chae, H. W. Choi, J. W. Sun, C. H. Shin, G. J. Min, C. J. Kang, H. K. Cho, and J. T. Moon, Dry Process International Symposium (unpublished).
5. E. A. Hudson, Z. Dai, Z. Li, S. Kang, S. Lee, W.-L. Chen, and R. Sadjadi, Proceedings of the Dry Process International Symposium (unpublished).
6. H. Struyf, Q. T. Le, T. Dupont, W. Boullart, and S. Vanhaelemeersch, Proceedings of the Dry Process International Symposium (unpublished).
7. N. Negishi, H. Takesue, M. Sumiya, T. Yoshida, and M. Izawa, Proceedings of the Dry Process International Symposium (unpublished).
8. A. Kojima, Proceedings of the Dry Process International Symposium (unpublished).
9. J. Robiche, P. C. Boyle, M. M. Turner, and A. R. Ellingboe, J. Phys. D 36, 1810 (2003).
10. V. Georgieva, A. Bogaerts, and R. Gijbels, J. Appl. Phys. 94, 3748 (2003).
11. P. C. Boyle, A. R. Ellingboe, and M. M. Turner, Plasma Sources Sci. Technol. 13, 493 (2004).
12. P. C. Boyle, A. R. Ellingboe, and M. M. Turner, J. Phys. D 37, 697 (2004).
13. P. C. Boyle, J. Robiche, and M. M. Turner, J. Phys. D 37, 1451 (2004).
14. H. C. Kim and J. K. Lee, Phys. Rev. Lett. 93, 085003 (2004).
15. V. Georgieva, A. Bogaerts, and R. Gijbels, Phys. Rev. E 69, 026406 (2004).
16. W. Tsai, G. Mueller, R. Linquest, B. Frazier, and V. Vahedi, J. Vac. Sci. Technol. B 45, 3276 (1996).
17. C. Janowiak, S. Ellingboe, and I. Morey, J. Vac. Sci. Technol. A 18, 1859 (2000).
18. F. Fracassi, R. d'Agostino, E. Fornelli, F. Illuzzi, and T. Shirafuji, J. Vac. Sci. Technol. A 21, 638 (2003).
19. S. Rauf and M. J. Kushner, IEEE Trans. Plasma Sci. 27, 1329 (1999).
20. K. Maeshige, G. Washio, T. Yagisawa, and T. Makebe, J. Appl. Phys. 91, 9494 (2002).
21. H. C. Kim, J. K. Lee, and J. W. Shon, Phys. Plasmas 10, 4545 (2003).
22. B. Jeon, D. S. Lee, K. H. Bai, and H. Y. Chang, Proceedings of the Dry Process International Symposium (unpublished).
23. T. Yagisawa and T. Makabe, IEEE Trans. Plasma Sci. 4, 521 (2003).
24. G. Wakayama and K. Nanbu, IEEE Trans. Plasma Sci. 31, 638 (2003).
25. J. K. Lee, N. Y. Babaeva, H. C. Kim, O. V. Manuilenko, and J. W. Shon, IEEE Trans. Plasma Sci. 32, 47 (2004).
26. T. Yagisawa, K. Maeshige, T. Shimada, and T. Makabe, IEEE Trans. Plasma Sci. 32, 90 (2004).
27. T. Kitajima, Y. Takeo, N. Nakano, and T. Makabe, J. Appl. Phys. 84, 5928 (1998).
28. T. Kitajima, Y. Takeo, and T. Makabe, J. Vac. Sci. Technol. A 17, 2510 (1999).
29. T. Kitajima, Y. Takeo, Z. L. Petrovic, and T. Makabe, Appl. Phys. Lett. 77, 489 (2000).
30. M. J. Colgan, M. Meyyappan, and D. E. Murnick, Plasma Sources Sci. Technol. 3, 181 (1994).
31. H. H. Goto, H.-D. Lowe, and T. Ohmi, J. Vac. Sci. Technol. A 10, 3048 (1992).
32. M. Surendra and D. B. Gravás, Appl. Phys. Lett. 59, 2091 (1991).
33. E. Abdel-Fattah and H. Sugai, Appl. Phys. Lett. 83, 1533 (2003).
34. T. Ohta, K.-I. Hara, T. Ishida, M. Hori, T. Goto, M. Ito, S. Kawakami, and N. Ishii, J. Appl. Phys. 94, 1428 (2003).
35. T. Ohta, T. Ishida, M. Hori, T. Goto, M. Ito, and S. Kawakami, J. Appl. Phys. 94, 1428 (2003).
36. C. Streinbruchel, Appl. Phys. Lett. 55, 1960 (1989).
37. C. Streinbruchel, J. Vac. Sci. Technol. A 8, 1663 (1990).
38. K. Pelhos, V. M. Donnely, A. Kornblit, M. L. Green, R. B. Van Dover, L. Manchanda, Y. Hu, M. Morris, and E. Bauer, J. Vac. Sci. Technol. A 19, 1361 (2001).
39. M. F. Doemling, N. R. Rueger, G. S. Oerhlein, and J. M. Cook, J. Vac. Sci. Technol. B 16, 1998 (1998).
40. C. Biloiu, I. A. Biloiu, Y. Sakai, Y. Suda, and A. Ohta, J. Vac. Sci. Technol. A 22, 13 (2004).
41. M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 17, 26 (1999).
42. T. Shirasaki, F. Moguet, L. Lozano, A. Tressaud, G. Nase, and E. Papirer, Carbon 37, 1891 (1999).