Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  May, M J ^a,d   Mortini, B ^a   Sourd, C ^b   Perret, D ^c   Chung, D W ^c   Barclay, G ^c   Brochon, C ^d   Hadziioannou, G ^d  

^a STMICROELECTRONICS   (Italy)

^b CEA LETI   (France)

^c ROHM AND HAAS COMPANY   (United States)

^d UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

193 nm and 248 nm resists; AFM; Chemical amplification; Etch resistance; FTIR; Oxide etch; TGA

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OLEFINS; PLASMA ETCHING; THERMOGRAVIMETRIC ANALYSIS;

193 NM AND 248 NM RESISTS; CHEMICAL AMPLIFICATION; ETCH RESISTANCE; OXIDE ETCH;

PHOTORESISTS;

EID: 33745598870     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656397     Document Type: Conference Paper

References (15)

1. Kunz et al., Limits to etch resistance for 193-nm single-layer resists, Proc. of SPIE., 1996, 2724, 365-376
2. Kunz et al., Acid catalyzed single layer resists for ArF lithography, Proc. of SPIE., 1993, 1925, 167-175
3. Kaimoto et al., Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification, Proc. of SPIE, 1992, 1627, 66-73
4. M. Endo et al., Challenges in excimer laser lithography for 256M DRAM and beyond, IEDM Tech. Digest, 1992, 45
5. R.D. Allen et al., Protecting groups for 193-nm photoresists, Proc. of SPIE., 1996, 2724, 334-343
6. R. R. Dammel et al., Lithographic performance of a dry-etch stable methacrylate resist at 193 nm, Proc. of SPIE, 1998, 3333, 144-151
7. R.D. Allen et al., Single Layer Resists with Enhanced Etch Resistance for 193 nm Lithography, J. Photopolym. Sci. Technol., 1994, 7 (3), 507-516
8. T. Wallow et al., Reactive ion etching of 193 nm resist candidates: current platforms, future requirements, Proc. of SPIE, 1998, 3333, 92-101
9. B. Mortini et al., Investigation of 193-nm resist and plasma interactions during an oxide etching process,Proc. of SPIE, 2003, 5039, 847-857
10. K. Patterson et al., Improving the performance of 193-nm photoresists based on alicyclic polymers,Proc. of SPIE, 1998, 3333, 425-437
11. Y.C. Bae et al., Mechanistic understanding of post etch roughness in 193 nm photoresists, Proc. of SPIE, 2003, 5039, 665-671
12. H. Goken et al.., Increase of etch resistance of deep ultraviolet photoresist by implantation, J. Electrochem. Soc., 1983, 130, 143
13. R.D. Allen et al., 193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system, Proc. of SPIE., 1995, 2438, 474-485
14. N. Pugliano et al., Negative tone 193 nm photoresists, Proc. of SPIE, 2003, 5039, 698-704
15. K. Patel et al., IBM-JSR Negative tone resist: Polymer design, material properties and lithographic performance, Proc. of SPIE, 2004, 5376, 94-102