The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Vogt, Bryan D ^a   Kang, Shuhui ^a   Prabhu, Vivek M ^a   Rao, Ashwin ^a   Lin, Eric K ^a   Satija, Sushil K ^a   Turnquest, Karen ^b   Wu, Wen Li ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SEMATECH   (United States)

Author keywords

Chemically amplified photoresists; Diffusion; Line edge roughness; Neutron reflectivity; Photolithography

Indexed keywords

CHEMICALLY AMPLIFIED PHOTORESISTS; CRITICAL DIMENSION (CD); DEPROTECTION REACTION; LINE EDGE ROUGHNESS (LER); METHACRYLATE; POST-EXPOSURE BAKE (PEB);

DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NEUTRON REFLECTION; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION;

PHOTORESISTS;

EID: 33745617927     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656464     Document Type: Conference Paper

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