Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2203-2211

  Kim, D H ^a   Lee, C H ^a   Cho, S H ^a   Lee, N E ^a   Kwon, G C ^b  

^a Sungkyunkwan University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SURFACE ROUGHNESS;

AR CHEMISTRY; ETCH SELECTIVITY; FREQUENCY SOURCE FREQUENCY (FSF);

PHOTORESISTS;

EID: 31144474496     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2009770     Document Type: Conference Paper

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