In situ measurement of plasma charging on SiO 2 hole bottoms and reduction by negative charge injection during etching

Applied Surface Science

Volumn 254, Issue 12, 2008, Pages 3696-3709

  Ohmori, T ^a   Makabe, T ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Charging damage; Charging free process; Negative charge injection

Indexed keywords

CHARGE INJECTION; NANOELECTRONICS; PLASMA ETCHING; POSITIVE IONS; VELOCITY DISTRIBUTION;

CHARGING DAMAGE; CHARGING-FREE PROCESS; HOLE BOTTOMS; NEGATIVE CHARGE INJECTION; PLASMA DAMAGE;

SILICA;

EID: 40849141091     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.070     Document Type: Article

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