Modeling of feature profile evolution in SiO2 as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8876-8882

  Shimada, Takashi ^a   Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Charging; Competitive process; Feature profile evolution; Radial uniformity; SiO2 etching

Indexed keywords

BIAS VOLTAGE; COMPUTER AIDED DESIGN; FLUOROCARBONS; PLASMA ETCHING; PLASMAS; REACTIVE ION ETCHING;

COMPETITIVE PROCESS; FEATURE PROFILE EVOLUTION; FLUOROCARBON PLASMA; RADIAL UNIFORMITY;

SILICON WAFERS;

EID: 34547888047     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8876     Document Type: Article

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