|
|
Volumn 20, Issue 3, 2002, Pages 1026-1030
|
|
Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CHLOROFLUOROCARBONS;
DEPOSITION;
DIELECTRIC MATERIALS;
ELECTRIC CHARGE;
ELECTRIC CONTACTS;
LEAKAGE CURRENTS;
MOLECULAR WEIGHT;
NEGATIVE IONS;
PLASMA ETCHING;
POLYMERIZATION;
POLYMERS;
PULSE TIME MODULATION;
RATE CONSTANTS;
SILICON NITRIDE;
UHF DEVICES;
X RAY PHOTOELECTRON SPECTROSCOPY;
INFRARED DIODE LASER ABSORPTION SPECTROSCOPY (IR-LAS);
ULTRA HIGH FREQUENCY (UHF) PLASMAS;
SILICA;
|
|
EID: 0035998532
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1479737 Document Type: Conference Paper |
|
Times cited : (19)
|
|
References (9)
|
