Pattern-dependent charging and the role of electron tunneling

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2281-2290

  Giapis, Konstantinos P ^a   Hwang, Gyeong S ^a  

^a California Institute of Technology   (United States)

Author keywords

Charging damage; Electron tunneling; Gate oxide degradation, sheath dynamics; Notching; Plasma charging; Plasma etching; Profile evolution

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; ELECTRON TUNNELING; OXIDES; PLASMA SHEATHS; SUBSTRATES;

GATE OXIDE DEGRADATION; PATTERN DEPENDENT CHARGING;

PLASMA ETCHING;

EID: 0032050102     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2281     Document Type: Review

References (57)

1. S. Wolf: Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, CA, 1995) Vol. 3.
2. R. A. Gottscho: Phys. World 6 (1993) 39.
3. D.B Graves, M. J. Kushner, J. W. Gallagher, A. Garscadden, G. S. Oehrlein and A. V. Phelps: Database Needs for Modeling and Simulation of Plasma Processing (National Academy Press, Washington, DC, 1996).
4. Proc. 1st Int. Symp. Plasma Process-Induced Damage (Santa Clara, 1996).
5. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue and A. Nakaue: Jpn. J. Appl. Phys. 34 ( 1995) 2107.
6. N. Fujiwara, T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 34 (1995) 2095.
7. K. Hashimoto: Jpn. J. Appl. Phys. 32 (1993) 6109.
8. K. P. Cheung and C. P. Chang: J. Appl. Phys. 75 (1994) 4415, and references cited therein.
9. T. Kinoshita, M. Hane and J. P. McVittie: J. Vac. Sci. Technol. B 14 (1996) 560.
10. G. S. Hwang and K. P. Giapis: J. Vac. Sci. Technol. B 15 (1997) 70.
11. M. A. Lieberman and A. J. Lichtenberg: Principles of Plasma Dis-charges and Materials Processing (John Wiley & Sons, New York, 1994).
12. J. R. Woodworth, M. E, Riley, P. A. Miller, G. A. Hebner and T. W. Hamilton: J. Appl. Phys. 81 (1997) 5950.
13. S. Ogino, N. Fujiwara, H. Miyatake and M. Yoneda: Jpn. J. Appl. Phys. 35 (1996) 2445.
14. G. S. Hwang and K. P. Giapis: J. Appl. Phys. 82 (1997) 566.
15. G. S. Hwang and K. P. Giapis: Phys. Rev. Lett. 79 (1997) 845.
16. G. S. Hwang and K. P. Giapis: Appl. Phys. Lett. 70 (1997) 2377.
17. G. S. Hwang and K. P. Giapis: J. Vac. Sci. Technol. B 15 (1997) 1839.
18. 2 and the poly-Si may increase the etch yield of the deflected energetic ions that impinge at the notch apex: however, the contribution of such mechanical effects to notching is ex-pected to be small.
19. J. C. Arnold and H. H. Sawin: J. Appl. Phys. 70 (1991) 5314.
20. G. S. Hwang and K. P. Giapis: Appl. Phys. Lett. 71 (1997) 458.
21. J. Liu. G. L. Huppert and H. H. Sawin: J. Appl. Phys. 68 (1990) 3916.
22. D. J. Economou and R. C. Alkire: J. Electrochem. Soc. 135 (1988) 941.
23. S. G. Ingram, J. Appl. Phys. 68 (1990) 500.
24. N. Fujiwara, S. Ogino, T. Maruyama and M. Yoneda: Plasma Sources Sci. Technol. 5 (1996) 126.
25. M. S. Barnes, J. C. Foster and J. H. Keller: IEEE Trans. Plasma Sci. 19 (1991) 240.
26. The low energy ions are also less directional, which helps sidewall neutralization by direct irradiation from the plasma during the sheath potential minimum: however, this contribution is small as compared to the flux of ions that arrive at the sidewalls after traveling some distance into the trench, before they are deflected.
27. G. S. Hwang and K. P. Giapis: Appl. Phys. Lett. 71 (1997) 1942.
28. N. Kofuji, K. Tsujimoto and T. Mizutani: Proc. 17th Dry Process Symp. (Tokyo, 1995) p. 39.
29. N. Kofuji, M. Mori, M. Izawa, K. Tsujimoto and S. Tachi: Proc. 19th Dry Process Symp. (Tokyo, 1997) p. 113.
30. T. Shibayama, H. Shindo and Y. Horiike: Plasma Sources Sci. Technol. 5 (1996) 254.
31. M. E. Barone and D. B. Graves: J. Appl. Phys. 78 (1995) 6604.
32. A. Hasegawa, Y. Hikosaka, K. Hashimoto and M. Nakamura: Proc. 18th Dry Process Symp. (Tokyo, 1996) p. 43.
33. L. J. Overzet, B. A. Smith, J. Kleber and S. K. Kanakasabapathy: Jpn. J. Appl. Phys. 36 (1997) 2443.
34. S. Samukawa and K. Terada: J. Vac. Sci. Technol. B 12 (1994) 3300.
35. S. Samukawa: Appl. Phys. Lett. 64 (1994) 3398.
36. T. H. Ahn, K. Nakamura and H. Sugai: Plasma Sources Sci. Technol. 5 (1996) 139.
37. T. H. Ahn, K. Nakamura and H. Sugai: Jpn. J. Appl. Phys. 34 (1995) L1405.
38. T. Kinoshita, T. Nozawa, M. Hane and J. P. McVittie: Proc. 18th Dry Process Symp. (Tokyo, 1996) p. 37.
39. M. Tuda, K. Ono, M. Tsuchihashi, M. Hanazaki and T. Komemura: Proc. 19th Dry Process Symp. (Tokyo, 1997) p. 57.
40. T. Maruyama, N. Fujiwara, S. Ogino and M. Yoneda: Jpn. J. Appl. Phys. 36 (1997) 2526.
41. G. S. Hwang and K. P. Giapis: Jpn. J. Appl. Phys. 37 (1998) 2291.
42. T. Morimoto, C. Takahashi and S. Matsuo: Proc. 13th Dry Process Symp. (Tokyo, 1991) p. 57.
43. G. S. Hwang and K. P. Giapis: Appl. Phys. Lett. 71 (1997) 2928.
44. The etch rate has been observed to decrease with aspect ratio: thus, narrower trenches etch more slowly than wider trenches: see R. A. Gottscho, C. W. Jurgensen and D. J. Vitkavage: J. Vac. Sci. Technol. B 10 (1992) 2133.
45. M. Lenzlinger and E. H. Snow: J. Appl. Phys. 40 (1969) 278.
46. Z. A. Weinberg: Solid-State Electronics 20 (1974) 11.
47. M. Hirose: Mater. Sci. Eng. B 41 (1996) 35.
48. DT = 0.5.
49. D. Park and C. Hu: Proc. 2nd Int. Symp. Plasma Process-Induced Damage (Monterey, CA, 1997) p. 15.
50. 2 layer on its backside that wraps over to the front edge so that the substrate is in electrical contact neither with the platen nor with the plasma: see also ref. 8.
51. G. S. Hwang and K. P. Giapis: Appl. Phys. Lett. 71 (1997) 1945.
52. G. S. Hwang and K. P. Giapis: J. Electrochem. Soc. 144 (1997) L285.
53. ox < 7 nm, the vectorial sum of the two components increases slightly.
54. Only specular reflection is considered: the energy transfer is assumed to follow hard-sphere collision kinematics with a gas-atom to surface mass ratio of 1.0: see also G. S. Hwang and K. P. Giapis: Phys. Rev. Lett. 77 (1996) 3049.
55. No overetching time is stated because it is impossible to calibrate the reactive ion flux without an etching experiment of a structure similar Io the simulated one.
56. G. S. Hwang and K. P. Giapis: 23rd Ann. Tegal Plasma Seminar Proc. (San Fransisco, CA, 1997) pp. 79-90.
57. The electron flux to the substrate can also be increased by increasing the electron irradiance of intermediate gates through the trench entrance preferably by decreasing the feature aspect ratio and/or the mask thickness: see ref. 14 and also G. S. Hwang and K. P. Giapis: J. Vac. Sci. Technol. B 15 (1997) 1741. More electrons help decrease the gale po-tentials, thus providing a new path for plasma electrons to reach the substrate by tunneling through the underlying oxide.