-
1
-
-
0019698649
-
Matching properties and voltage and temperature dependence of MOS capacitors
-
Dec.
-
L. McCreary, "Matching properties and voltage and temperature dependence of MOS capacitors," IEEE J. Solid-State Circuits, vol. SC-16, pp. 608-616, Dec. 1981.
-
(1981)
IEEE J. Solid-State Circuits
, vol.SC-16
, pp. 608-616
-
-
McCreary, L.1
-
2
-
-
0026692318
-
Thin gate and analog capacitor dielectrics for submicron device fabrication
-
S. P. Tay and J. P. Ellui, "Thin gate and analog capacitor dielectrics for submicron device fabrication," J. Electron. Mater., vol. 21, no. 1, pp. 45-55, 1992.
-
(1992)
J. Electron. Mater.
, vol.21
, Issue.1
, pp. 45-55
-
-
Tay, S.P.1
Ellui, J.P.2
-
3
-
-
0024172251
-
Polycide/metal capacitors for high precision A/D converters
-
C. Kaya, H. Tigelaar, J. Paterson, M. de Wit, J. Fattaruso, S. Kiriakai, K. S. Tan, and F. Tsay, "Polycide/metal capacitors for high precision A/D converters," in IEDM Tech. Dig., 1988, pp. 782-785.
-
IEDM Tech. Dig., 1988
, pp. 782-785
-
-
Kaya, C.1
Tigelaar, H.2
Paterson, J.3
De Wit, M.4
Fattaruso, J.5
Kiriakai, S.6
Tan, K.S.7
Tsay, F.8
-
4
-
-
0032226772
-
Integration of polycide/metal capacitors in advanced device fabrication
-
A. Yin, J. White, A. Karroy, and C. Hu, "Integration of polycide/metal capacitors in advanced device fabrication," in Proc. 5th Int. Conf. Solid-State and Integrated Circuit Technology, 1998, pp. 131-134.
-
Proc. 5th Int. Conf. Solid-State and Integrated Circuit Technology, 1998
, pp. 131-134
-
-
Yin, A.1
White, J.2
Karroy, A.3
Hu, C.4
-
5
-
-
2942667893
-
High reliability metal insulator metal capacitors for silicon germanium analog applications
-
K. Stem, J. Koeis, G. Hueekel, E. Eld, T. Bartush, R. Groves, N. Greco, D. Harame, and T. Tewksbury, "High reliability metal insulator metal capacitors for silicon germanium analog applications," in Proc. BCTM, 1997, pp. 191-194.
-
Proc. BCTM, 1997
, pp. 191-194
-
-
Stem, K.1
Koeis, J.2
Hueekel, G.3
Eld, E.4
Bartush, T.5
Groves, R.6
Greco, N.7
Harame, D.8
Tewksbury, T.9
-
6
-
-
0002732640
-
A 0.35 μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
-
S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S. Van Huylenbroeck, M. Da Rold, E. Rosseel, P. Chevalier, and P. Coppens, "A 0.35 μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components," in Proc. BCTM, 2000, pp. 106-109.
-
Proc. BCTM, 2000
, pp. 106-109
-
-
Decoutere, S.1
Vleugels, F.2
Kuhn, R.3
Loo, R.4
Caymax, M.5
Jenei, S.6
Croon, J.7
Van Huylenbroeck, S.8
Da Rold, M.9
Rosseel, E.10
Chevalier, P.11
Coppens, P.12
-
7
-
-
0028447325
-
Oxide damage from charging: Breakdown mechanism and oxide quality
-
June
-
S. Fang and J. P. McVittie, "Oxide damage from charging: breakdown mechanism and oxide quality," IEEE Trans. Electron Devices, vol. 41, pp. 1034-1039, June 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 1034-1039
-
-
Fang, S.1
McVittie, J.P.2
-
9
-
-
0035456697
-
Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors
-
J. Ackaert, Z. Wang, E. Backer, P. Colson, and P. Coppens, "Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors," Microelectron. Reliab., vol. 41, pp. 1403-1407, 2001.
-
(2001)
Microelectron. Reliab.
, vol.41
, pp. 1403-1407
-
-
Ackaert, J.1
Wang, Z.2
Backer, E.3
Colson, P.4
Coppens, P.5
-
10
-
-
0034514294
-
Plasma-induced defect generation on silicon surfaces in HDP-VCD processing
-
H. M'Saad, S. Desai, D. Witty, C. Hamon, S. Cho, and F. Moghadam, "Plasma-induced defect generation on silicon surfaces in HDP-VCD processing," in Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000, pp. 42-45.
-
Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000
, pp. 42-45
-
-
M'Saad, H.1
Desai, S.2
Witty, D.3
Hamon, C.4
Cho, S.5
Moghadam, F.6
-
11
-
-
0034829031
-
Relation between plasma-process induced oxide failure fraction and antenna ratio
-
Z. Wang, A. Scarpa, C. Salm, and F. G. Kuper, "Relation between plasma-process induced oxide failure fraction and antenna ratio," in Proc. 6th Int. Symp. Plasma Process-Induced Damage (P2ID), pp. 16-19.
-
(2001)
Proc. 6th Int. Symp. Plasma Process-Induced Damage (P2ID)
, pp. 16-19
-
-
Wang, Z.1
Scarpa, A.2
Salm, C.3
Kuper, F.G.4
-
12
-
-
0008536196
-
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
-
Apr.
-
R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown," IEEE Trans. Electron Devices, vol. 45, p. 904, Apr. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 904
-
-
Degraeve, R.1
Groeseneken, G.2
Bellens, R.3
Ogier, J.L.4
Depas, M.5
Roussel, P.J.6
Maes, H.E.7
-
13
-
-
0028529702
-
Charge damage caused by electron shading effect
-
K. Hashimoto, "Charge damage caused by electron shading effect," Jpn. J. Appl. Phys., vol. 33, pp. 6013-6018, 1994.
-
(1994)
Jpn. J. Appl. Phys.
, vol.33
, pp. 6013-6018
-
-
Hashimoto, K.1
-
14
-
-
2942648121
-
Antenna test structures matrix description, application for optimization HDP oxide deposition, metal etch, Ar preclean and passivation processing in sub-half micron CMOS processing
-
J. Ackaert, "Antenna test structures matrix description, application for optimization HDP oxide deposition, metal etch, Ar preclean and passivation processing in sub-half micron CMOS processing," in Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000, pp. 77-80.
-
Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000
, pp. 77-80
-
-
Ackaert, J.1
-
15
-
-
0034512399
-
Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process
-
J. P. Carrère, J. C. Oberlin, and M. Haond, "Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process," in Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000, p. 164.
-
Proc. 5th Int. Symp. Plasma Process-Induced Damage (P2ID), 2000
, pp. 164
-
-
Carrère, J.P.1
Oberlin, J.C.2
Haond, M.3
-
17
-
-
0034823075
-
Charging damage in floating metal-insulator-metal capacitors
-
J. Ackaert, Z. Wang, E. Backer, and P. Coppers, "Charging damage in floating metal-insulator-metal capacitors," in proc. 6th Int. Symp. Plasma Process-Induced Damage (P2ID), 2001, pp. 120-123.
-
Proc. 6th Int. Symp. Plasma Process-Induced Damage (P2ID), 2001
, pp. 120-123
-
-
Ackaert, J.1
Wang, Z.2
Backer, E.3
Coppers, P.4
-
18
-
-
2942641924
-
Dielectric breakdown, defect and reliability in SiN MIMCAPs
-
J. Scarpulla, E. D. Ahlers, D. C. Eng, D. L. Leung, S. R. Olson, and C. S. Wu, "Dielectric breakdown, defect and reliability in SiN MIMCAPs," in Proc. of GaAs Reliability Workshop, 1998, pp. 92-105.
-
Proc. of GaAs Reliability Workshop, 1998
, pp. 92-105
-
-
Scarpulla, J.1
Ahlers, E.D.2
Eng, D.C.3
Leung, D.L.4
Olson, S.R.5
Wu, C.S.6
|