Resist-related damage on ultrathin gate oxide during plasma ashing

IEEE Electron Device Letters

Volumn 18, Issue 2, 1997, Pages 33-35

  Chien, Chao Hsin ^b   Chang, Chun Yen ^a,b   Lin, Horng Chih ^a,c   Chang, Tsai Fu ^b   Chiou, Shean Guang ^c   Chen, Liang Po ^c   Huang, Tiao Yuan ^a,c  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; MOS DEVICES; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR PLASMAS; SILICON WAFERS;

PLASMA ASHING; PLASMA INDUCED DAMAGE; ULTRATHIN GATE OXIDES; WET ETCHING;

OXIDES;

EID: 0031078749     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553034     Document Type: Article

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