Influence of gate oxide quality on plasma process-induced charging damage in ultra thin gate oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2035-2039

  Okushima, Mototsugu ^a   Noguchi, Ko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Channeling; Charging damage; Contact etching; Gate oxide quality; Plasma damage; Reliability; Ultra thin oxide

Indexed keywords

GRAIN BOUNDARIES; ION BOMBARDMENT; ION IMPLANTATION; OXIDES; PLASMA ETCHING; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

CHANNELING; CHARGING DAMAGE; CONTACT ETCHING; GATE OXIDE QUALITY; PLASMA DAMAGE; ULTRATHIN OXIDE;

MOS DEVICES;

EID: 19644367417     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2035     Document Type: Article

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