Evaluation of charge passed through gate-oxide films using a charging damage measurement electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 662-668

  Watanabe, Seiichi ^a   Sumiya, Masahiro ^a   Tamura, Hitoshi ^a   Yoshioka, Ken ^a   Tokunaga, Takafumi ^a   Mizutani, Tatsumi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Charging damage; Electron cyclotron resonance; Electron shading effect; Etching; Plasma

Indexed keywords

CAPACITORS; CAVITY RESONATORS; ELECTRODES; ELECTRON ABSORPTION; GATES (TRANSISTOR); OXIDES; PHOTORESISTS; PLASMA DEVICES; PLASMA ETCHING; RESISTORS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

CHARGING DAMAGE MEASUREMENT; ELECTRON SHADING EFFECT; PLASMA ETCHERS; TIME MODULATION (TM) BIAS;

SEMICONDUCTING FILMS;

EID: 0033900614     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.662     Document Type: Article

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