Profile distortion caused by local electric field in polysilicon etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4573-4576

  Ogino, Satoshi ^a   Fujiwara, Nobuo ^a   Miyatake, Hiroshi ^a   Yoneda, Masahiro ^a   Harada, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Charge build up; Dry etching; ECR RIE; Electron supply; Local side etch

Indexed keywords

CHARGE BUILT UP; ELECTRON SUPPLY; LOCAL SIDE ETCH;

ELECTRIC FIELDS; ELECTRON BEAMS; EXPERIMENTS; SILICON; SUBSTRATES;

DRY ETCHING;

EID: 0030205503     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4573     Document Type: Article

References (4)

1. N. Fujiwara, T. Maruyama and M. Yoneda: Jpn. J. Appl. Phys. 30 (1995) 2095.
2. N. Fujiwara, T. Maruyama, M. Yoneda, K. Tsukamoto and T. Banjo: Jpn. J. Appl. Phys. 33 (1994) 2164.
3. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue and A. Nakaue: Proc. 16th Symp. Dry Process (1994) p. 37.
4. T. Morimoto, C. Takahashi and S. Matsuo: Proc. 13th Symp. Dry Process (1991) p. 57.