Effects of charge build-up of underlying layer by high aspect ratio etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2314-2320

  Yonekura, Kazumasa ^a   Kiritani, Masahide ^a   Sakamori, Shigenori ^a   Yokoi, Takahiro ^a   Fujiwara, Nobuo ^a   Miyatake, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Charge build up; Electron cyclotron resonance; Microwave plasma; MNOS capacitor; Plasma etching; Pulse modulated

Indexed keywords

ASPECT RATIO; CAPACITORS; CONDUCTIVE FILMS; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRON CYCLOTRON RESONANCE; FLUOROCARBONS; PHOSPHORUS; PULSE MODULATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ELECTRON SHADING; FLUOROCARBON GAS PLASMAS; METAL NITRIDE OXIDE SILICON (MNOS) CAPACITORS;

PLASMA ETCHING;

EID: 0032045859     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2314     Document Type: Article

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