Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 834-840

  Samukawa, Seiji ^a   Noguchi, Ko ^a   Colonell, Jennifer I ^b   Bogart, Katherine H A ^b   Malyshev, Mikhail V ^b   Donnelly, Vincent M ^b  

^a NEC CORPORATION   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CARRIER CONCENTRATION; CRYSTAL DEFECTS; IONS; PLASMA ETCHING; SILICA; SURFACE TOPOGRAPHY; TITANIUM NITRIDE;

INDUCTIVELY COUPLED PLASMA (ICP); TRANSFORMER COUPLED PLASMA (TCP);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034156292     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591283     Document Type: Article

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