Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1632-1638

  Arulkumaran, S ^a,b   Egawa, T ^a   Ishikawa, H ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

4 in. sapphire; 4 in. Si; AlGaN GaN HEMTs; Breakdown voltage; Device temperature; Infrared camera; Self heating

Indexed keywords

CAMERAS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HEATING; INFRARED DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS;

4-IN. SAPPHIRE; 4-IN. SI; ALGAN/GAN HEMT; DEVICE TEMPERATURE; INFRARED CAMERAS; SELF-HEATING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27744433089     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.08.014     Document Type: Article

References (46)

1. M. Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, X. Hu, and G. Simin Appl Phys 76 2000 3807
2. Y. Irokawa, B. Luo, F. Ren, C.-C. Pan, G.-T. Chen, and J.I. Chyi Electrochem Solid State Lett 7 2004 G8
3. Y.-F. Wu, B.P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, and S.P. Denbaars Solid-State Electron 41 1997 1569
4. Y.-F. Wu, B.P. Keller, P. Fini, S. Keller, T.J. Jenkins, and L.T. Kehias IEEE Electron Dev Lett 19 1998 50
5. T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno Appl Phys Lett 76 2000 121
6. S. Keller, Y.-F. Wu, G. Parish, N. Ziang, J.J. Xu, and B.P. Keller IEEE Trans Electron Dev 48 2001 552
7. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, and H.B. Dietrich IEEE Trans Electron Dev 48 2001 465
8. H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, and H. Ishikawa Phys Stat Sol (a) 200 2003 187
9. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo J Vac Sci Technol B 21 2003 888
10. Y.-F. Wu, D. Kopolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, and U.K. Mishra IEEE Trans Electron Dev 48 2001 586
11. R. Gaska, A. Osinsky, J.W. Yang, and M.S. Shur IEEE Electron Dev Lett 19 1998 89
12. S. Arukumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, and T. Shibata Appl Phys Lett 81 2002 1131
13. M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, and M. Mouri IEDM Tech Digest 2004 1031
14. A.T. Ping, Q. Chen, J.W. Yang, M.A. Khan, and I. Adesida IEEE Electron Dev Lett 19 1998 54
15. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, and L.T. Kehias IEEE Electron Dev Lett 20 1999 161
16. S. Arulkumaran, T. Egawa, H. Ishikawa, and T. Jimbo Jpn J Appl Phys, Part 2 40 2001 1081
17. T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, and N. Hara IEDM Tech Digest 2001 585
18. W.L. Pribble, J.W. Palmour, S.T. Sheppard, R.P. Smith, S.T. Alen, and T.J. Smith MTT-S Digest 2002 1819
19. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, and M. Yokoyama IEDM Tech Digest 2003 983
20. Y. Okamoto, Y. Ando, T. Nakayama, K. Hataya, H. Miyamoto, and T. Inoue IEEE Trans Electron Dev 51 2004 2217
21. G. Ellis, J. Moon, D. Wong, M. Micovic, P. Hashimoto, and M. Hu IEEE IMS Digest 2004 Fort Worth Texas TU1C-2
22. M. Kanamura, T. Kikkawa, and K. Joshin IEDM Tech Digest 2004 799
23. T. Egawa, N. Nakada, H. Ishikawa, and M. Umeno Electron Lett 36 2000 21
24. Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, and M. Surrugue Electron Lett 38 2002 91
25. N. Vellas, C. Gaquiere, Y. Guhel, M. Werquin, F. Bue, and R. Aubry IEEE Electron Dev Lett 23 2002 461
26. P. Javorka, A. Alam, A. Fox, M. Marso, M. Heuken, and P. Kordos Electron Lett 38 2002 288
27. J.D. Brown, R. Borges, E. Piner, A. Vescan, S. Singhal, and R. Therrien Solid-State Electron 46 2002 1535
28. W.E. Sutton, D. Pavlidis, H. Lahreche, B. Damilano, and R. Langer 11th GaAs Symposium-Munich 2003 209
29. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, and T. Ueda IEDM Tech Digest 2004 803
30. J.D. Brown IEEE MTT-S Digest 2004 833
31. J. Park, M.W. Shin, and C.C. Lee IEEE Electron Dev Lett 24 2003 424
32. J. Kuzmik, P. Javorka, A. Alam, M. Marso, M. Heuken, and P. Kordos IEEE Trans Electron Dev 49 2002 1496
33. A.P. Zhang, L.B. Rowland, E.B. Kaminsky, J.B. Tucker, J.W. Kretchmer, and A.F. Allen Electron Lett 39 2003 245
34. M. Kuball, J.M. Hayes, M.J. Uren, T. Martin, J.C.H. Birbeck, and R.S. Balmer IEEE Electron Dev Lett 23 2002 7
35. M. Kuball, S. Rajasingam, A. Sarua, M.J. Uren, T. Martin, and T. Hughes Appl Phys Lett 82 2003 124
36. N. Shigekawa, K. Shiojima, and T. Suemitsu J Appl Phys 92 2002 531
37. H.M. Kim, J.-S. Yoon, S.-H. Lee, J.-E. Oh, W.-S. Lee, and K.-I. Chun Jpn J Appl Phys, Part 2 39 2000 1087
38. J. Sun, H. Fatima, A. Koudymov, A. Chtinis, X. Hu, and H.-M. Wang IEEE Electron Dev Lett 24 2003 375
39. R. Dietrich, A. Wieszt, A. Vescan, H. Leier, R. Stenzel, and W. Klix Solid-State Electron 47 2003 123
40. S. Nuttinck, B.K. Wagner, B. Banerjee, S. Venkataraman, E. Gebara, and J. Laskar IEEE Trans Microwave Theory Tech 51 2003 2445
41. K.A. Filippov, and A.A. Balandin MRS Int J Nitride Semicond Res 8 2003 4
42. T.A. Eckhause, O. Suzer, C. Kurdak, F. Yun, and H. Morkoc Appl Phys Lett 82 2003 3035
43. A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, L.F. Eastman, and J.R. Shealy Phys Rev B 68 2003 035338
44. S. Arulkumaran, M. Miyoshi, T. Egawa, H. Ishikawa, and T. Jimbo IEEE Electron Dev 24 2003 497
45. S. Arulkumaran, T. Egawa, T. Matsui, and H. Ishikawa Appl Phys Lett 86 2005 123503
46. J. Spradlin, C. Dogan, J. Xie, R. Molner, A.A. Baski, and H. Morkoc Appl Phys Lett 84 2004 4150