High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2217-2222

  Okamoto, Yasuhiro ^a   Ando, Yuji ^a   Nakayama, Tatsuo ^a   Hataya, Koji ^a   Miyamoto, Hironobu ^a   Inoue, Takashi ^a   Senda, Masanobu ^b   Hirata, Koji ^b   Kosaki, Masayoshi ^b   Shibata, Naoki ^b   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

Field effect transistors (FET); Field modulating plate (FP); GaN; Recess

Indexed keywords

CAPACITANCE; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

FIELD MODULATING PLATE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; RECESSED GATE;

FIELD EFFECT TRANSISTORS;

EID: 10644284881     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838453     Document Type: Article

References (13)

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