Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4150-4152

  Spradlin, J ^a   Dogan S ^a,b   Xie, J ^a   Molnar, R ^a,c   Baski, A A ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b ATATÜRK UNIVERSITY   (Turkey)

^c MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECTS; CONDUCTION PATHWAYS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SCHOTTKY CONTACTS;

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC EQUIPMENT; LEAKAGE CURRENTS; METALLIZING; MOLECULAR BEAM EPITAXY; NITROGEN; OHMIC CONTACTS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SURFACE TOPOGRAPHY; THERMIONIC EMISSION; THIN FILMS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 2942650894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1751609     Document Type: Article

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