Thermal modeling and measurement of GaN-based HFET devices

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 424-426

  Park, Jeong ^a   Shin, Moo Whan ^b   Lee, Chin C ^a  

^a University of California at Irvine   (United States)

^b Myong Ji University   (South Korea)

Author keywords

HEMTs; Liquid crystal; Temperature measurement; Thermal measurement; Thermal simulation

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROPROCESSOR CHIPS; NEMATIC LIQUID CRYSTALS; THERMOANALYSIS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

HETEROJUNCTION FIELD EFFECT TRANSISTORS; NEMATIC LIQUID CRYSTAL THERMOGRAPHY; THERMAL MEASUREMENT; THERMAL SIMULATION;

FIELD EFFECT TRANSISTORS;

EID: 0041385878     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814020     Document Type: Letter

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