Very-high power density AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 586-590

  Wu, Yi Feng ^a,b   Kapolnek, David ^c   Ibbetson, James P ^b   Parikh, Primit ^a,b   Keller, Bernd P ^b   Mishra, Umesh K ^a,b,d  

^a IEEE   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c Ericsson Datacom Inc   (United States)

^d University of California   (United States)

Author keywords

AlGaN; FET; Flip chip; GaN; HEMT; Microwave power

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FLIP CHIP DEVICES; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; FLIP CHIP AMPLIFIER; MICROWAVE POWER; POWER DENSITY; SAPPHIRE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035278797     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906455     Document Type: Article

References (5)

1. GaN-based FET's for microwave power amplification
2. High power microwave GaN/AlGaN HEMT's on SiC substrates
3. Very-low resistance ohmic contact to n-GaN
4. High Al-content AlGaN/GaN MODFET's for ultra-high performance
5. Monte Carlo simulation of electron transport in gallium nitride