Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 531-535

  Shigekawa, Naoteru ^a   Shiojima, Kenji ^a   Suemitsu, Tetsuya ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; JUNCTION TEMPERATURES; OPTICAL STUDY; PHOTOLUMINESCENCE MEASUREMENTS;

ELECTRON TEMPERATURE; GALLIUM NITRIDE;

ELECTROLUMINESCENCE;

EID: 0036639037     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481973     Document Type: Article

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