Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

IEEE Electron Device Letters

Volumn 24, Issue 6, 2003, Pages 375-377

  Sun, Jie ^a   Fatima, H ^a   Koudymov, A ^a   Chitnis, A ^a   Hu, X ^b   Wang, H M ^a   Zhang, J ^a   Simin, G ^a   Yang, J ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

^b SET Inc   (United States)

Author keywords

Epoxy underfill; Flip chip; GaN AlGaN; HFETs; Thermal impedance

Indexed keywords

FIELD EFFECT TRANSISTORS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL CONDUCTIVITY;

THERMAL IMPEDANCE;

HETEROJUNCTIONS;

EID: 0042592919     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.813362     Document Type: Article

References (9)

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