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Volumn 82, Issue 18, 2003, Pages 3035-3037

Electric-field-induced heating and energy relaxation in GaN

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; ELECTRIC FIELD EFFECTS; ELECTRONS; GALLIUM NITRIDE; HEAT RESISTANCE; HEATING; PHONONS; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; TEMPERATURE MEASUREMENT;

EID: 0038189731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1571982     Document Type: Article
Times cited : (20)

References (17)
  • 3
    • 0010308225 scopus 로고
    • edited by C. M. Van Vliet (World Scientific, Singapore)
    • M. L. Roukes in Noise in Physical Systems, edited by C. M. Van Vliet (World Scientific, Singapore, 1987), pp. 595-604.
    • (1987) Noise in Physical Systems , pp. 595-604
    • Roukes, M.L.1
  • 15
    • 0004230762 scopus 로고
    • Springer, New York. See, especially Sec. 6.5 and Eq. 6.5.19 in the degenerate electron limit
    • K. Seeger, Semiconductor Physics: An Introduction (Springer, New York, 1991). See, especially Sec. 6.5 and Eq. 6.5.19 in the degenerate electron limit.
    • (1991) Semiconductor Physics: An Introduction
    • Seeger, K.1
  • 16
    • 51149220754 scopus 로고
    • For a discussion of substrate damage, see pp. 652ff
    • E. T. Swartz and R. O. Pohl, Rev. Mod. Phys. 61, 605 (1989). For a discussion of substrate damage, see pp. 652ff.
    • (1989) Rev. Mod. Phys. , vol.61 , pp. 605
    • Swartz, E.T.1    Pohl, R.O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.