Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

IEEE Electron Device Letters

Volumn 23, Issue 1, 2002, Pages 7-9

  Kuball, M ^a   Hayes, J M ^a   Uren, M J ^b   Martin, T ^b   Birbeck, J C H ^b   Balmer, R S ^b   Hughes, B T ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

AlGaN; FETs; GaN; Raman spectroscopy; Reliability; Temperature

Indexed keywords

GALLIUM NITRIDE; HEAT LOSSES; HEAT RESISTANCE; RAMAN SPECTROSCOPY; RELIABILITY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TEMPERATURE MEASUREMENT;

DEVICE GATE-DRAIN OPENINGS; SPATIAL RESOLUTION;

GATES (TRANSISTOR);

EID: 0036160966     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974795     Document Type: Article

References (11)

1. Very-high power density AlGaN/GaN HEMTs
2. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
3. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
4. AlGaN/GaN HEMT microwave CW power limits
5. Thermal imaging of electronic devices with low surface emissivity
6. Temperature distribution in Si-MOSFET's studied by micro Raman spectroscopy
7. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
8. Temperature dependence of Raman scattering in single crystal GaN films
9. Recent progress in SiC microwave MESFETs
10. Sapphire substrates for growth of GaN and related compounds
11. Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy