350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 803-806

  Hikita, Masahiro ^a   Yanagihara, Manabu ^a   Nakazawa, Kazushi ^a   Ueno, Hiroaki ^a   Hirose, Yutaka ^a   Ueda, Tetsuzo ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a   Egawa, Takashi ^b  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; OHMIC CONTACTS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SUBSTRATES; ALUMINUM GALLIUM NITRIDE; ELECTRIC GROUNDING; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS;

DRAIN CURRENTS; ELECTRIC FIELD STRENGTH; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); SOURCE-VIA GROUNDING (SVG) STRUCTURE;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE;

ALGAN/GAN HFETS; CURRENT HANDLING CAPABILITY; HIGH POWER; LOW SPECIFIC ON-STATE RESISTANCE; NANO SECONDS; OFF-STATE BREAKDOWN VOLTAGES; POWER; SI SUBSTRATES; SILICON SUBSTRATES; SOURCE-VIA GROUNDING STRUCTURES;

EID: 21644444294     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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