GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3807-3809

  Asif Khan, M ^a   Yang, J W ^a   Knap, W ^b,c,e   Frayssinet, E ^b,c   Hu, X ^a   Simin, G ^a   Prystawko, P ^b   Leszczynski, M ^b   Grzegory, I ^b   Porowski, S ^b   Gaska, R ^d   Shur, M S ^e   Beaumont, B ^f   Teisseire, M ^f   Neu, G ^f  

^a University of South Carolina   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c CNRS   (France)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^e RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^f CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001259718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126788     Document Type: Article

References (14)

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