Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1131-1133

  Arulkumaran, S ^a   Sakai, M ^a   Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a   Shibata, T ^b   Asai, K ^b   Sumiya, S ^b   Kuraoka, Y ^b   Tanaka, M ^b   Oda, O ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; DARK SPOTS; DC CHARACTERISTICS; DISLOCATION DENSITIES; EXTRINSIC TRANSCONDUCTANCE; FABRICATED DEVICE; GAN LAYERS; HIGH TEMPERATURE; LOW-DISLOCATION DENSITY; LOW-TEMPERATURE-GROWN GAN; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SMALL VARIATIONS;

CATHODOLUMINESCENCE; DRAIN CURRENT; GALLIUM NITRIDE; SAPPHIRE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79956058781     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498874     Document Type: Article

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