New technique for the thermal resistance measurement of power field effect transistors using cathodoluminescence

Japanese journal of applied physics

Volumn 39, Issue 11 A, 2000, Pages

  Kim, Hwa Mok ^a   Yoon, Jin Sik ^b   Lee, Seung Ho ^b   Oh, Jae Eung ^b   Lee, Won Sang ^c   Chun, Kye Ik ^c   Chung, Ki Woong ^c   Chung, Hae Won ^d   Kang, Tae Won ^a  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

^c LG   (South Korea)

^d Agency for Defence Development   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON BEAMS; ENERGY GAP; HEAT RESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

LOW ENERGY ELECTRON BEAMS; POWER FIELD-EFFECT TRANSISTORS;

MESFET DEVICES;

EID: 0034315962     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1087     Document Type: Article

References (5)

1. S. H. Wemple and H. Huang: GaAs FET Principles and Technology, eds. J. V. DiLorenzo and D. D. Khandelwal (Artech House Inc., Cambridge, 1982) Chap. 5.
2. H. C. Huang, F. N. Sechi and L. S. Napoli: Proc. 6th Cornell Biennial Electrical Engineering Conf. (Ithaca College, USA, 1977).
3. E. M. Fleuren: Proc. Int. Reliability Phys. Symp., 1987 (San Diego, 1987) Vol. 25, p. 369.
4. R. A. Stradling and P. C. Klipstein: Growth & Characterization of Semiconductors (Adam Hilger Ltd., Bristol and Philadelphia, 1990) Chap. 5.
5. I. Pankove: Optical Processes in Semiconductors (Dover Inc., New York, 1971) Chap. 2.