A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive N-SiC substrate for wireless base station applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 799-802

  Kanamura, M ^a   Kikkawa, T ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROPROCESSOR CHIPS; NITROGEN; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; VAPOR PHASE EPITAXY; WIRELESS TELECOMMUNICATION SYSTEMS; ALUMINUM GALLIUM NITRIDE; BASE STATIONS; III-V SEMICONDUCTORS; POWER AMPLIFIERS; WIDE BAND GAP SEMICONDUCTORS;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); OHMIC ELECTRODES; RECESSED OHMIC TECHNOLOGY; WIRELESS BASE STATIONS;

POWER AMPLIFIERS; GALLIUM NITRIDE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BASE STATION APPLICATIONS; HIGH ELECTRON-MOBILITY TRANSISTORS; HIGH GAIN; LOW-COSTS; SIC SUBSTRATES; SINGLE-CHIP; TRANSISTOR AMPLIFIERS; TRANSISTOR POWER AMPLIFIERS; WIRELESS BASE STATIONS;

EID: 21644480156     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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