Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 552-559

  Keller, S ^a   Wu, Y F ^a   Parish, G ^a   Ziang, N ^a   Xu, J J ^a   Keller, B P ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

FET; Gallium nitride; Microwave power

Indexed keywords

FABRICATION; FIELD EFFECT TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THERMAL CONDUCTIVITY;

GALLIUM NITRIDES; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MICROWAVE POWER ELECTRONICS;

HETEROJUNCTIONS;

EID: 0035279282     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906450     Document Type: Article

References (45)

1. Monte Carlo simulation of electron transport in gallium nitride
2. Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates
3. The preparation and properties of vapor-deposited single-crystal-line GaN
4. GaN electroluminescent diodes
5. Metalorganic vapor phase epitaxial growth of high quality GaN film using an AlN buffer layer
6. The use of metal-organics in the preparation of semiconductor materials I. Epitaxial gallium-V compounds
7. P-type conduction in Mg-doped GaN treated with low-energy electron irradiation (LEEBI)
8. Hole compensation mechanism of p-type GaN films
9. Microwave performance of a 0.2 μm gate AlGaN/GaN heterostructure field effect transistor
10. Nitres develops AlGaN/GaN HEMT's with record power performance
11. Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN
12. In-situ monitoring and Hall measurements of GaN grown with GaN buffer layers
13. On the origin of free carriers in high conducting n-GaN
14. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
15. 1-xN
16. Mechanism of yellow luminescence in GaN
17. Observation of native Ga vacancies in GaN by positron annihilation
18. Very high breakdown voltage and large transconductance realized on GaN heterojunction field-effect transistors
19. Measured microwave power performance of AlGaN/GaN MODFET
20. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
21. t and 1.7 W/mm output power at 10 GHz
22. High Al-content AlGaN/GaN MODFET's for ultra-high performance
23. GaN microwave electronics
24. High-transconductance self aligned AlGaN/GaN modulation-doped field-effect transistors with re-grown ohmic contacts
25. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
26. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
27. GaN-based FET's for microwave power amplification
28. High power GaN/AlGaN HEMT's on silicon carbide
29. High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance
30. High performance and large area flip-chip bonded AlGaN/GaN MODFETs
31. GaN HEMT's grown on sapphire substrates for microwave power amplification
32. High power GaN/AlGaN HEMT's on silicon carbide
33. 1-8-GHz GaN-based power amplifier using flip-chip bonding
34. 3-9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching
35. Spontaneous polarization and piezoelectric constants of III-V nitrides
36. Polarization fields in AlGaN/GaN heterojunctions
37. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
38. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
39. 6.6-Watt/mm AlGaN HEMT's on sapphire substrate
40. Gallium nitride based electronics and opto-electronics
41. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
42. Microwave performance of AlGaN/GaN inverted MODFET
43. AlGaN/GaN microwave power HEMT's
44. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
45. High performance microwave power GaN/AlGaN MODFET's grown by RF-assisted MBE